Integer quantum Hall effect in double-layer systems

被引:16
|
作者
Sorensen, ES
MacDonald, AH
机构
[1] Department of Physics, Indiana University, Bloomington
关键词
D O I
10.1103/PhysRevB.54.10675
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider the localization of independent electron orbitals in double-layer two-dimensional electron systems in the strong magnetic-field limit. Our study is based on numerical Thouless number calculations for realistic microscopic models, and on transfer-matrix calculations for phenomenological network models. The microscopic calculations indicate a crossover regime for weak interlayer tunneling in which the correlation-length exponent appears to increase. Comparison of network model calculations with microscopic calculations casts doubt on their generic applicability.
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页码:10675 / 10687
页数:13
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