Spontaneous Emission from GaN/AlGaN based Terahertz Quantum Cascade Laser Structure grown on GaN Substrate

被引：0
|
作者：
Terashima, W. [1 ]
Hirayama, H. [1 ]
机构：
[1] RIKEN, Terahertz Quantum Device Lab, Terahertz Wave Res Program, Aoba Ku, Sendai, Miyagi 9800845, Japan
来源：
35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010) | 2010年
关键词：
DESIGN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated Nitrides-based THz-QCL structure grown on GaN substrate. The Output power for QCL on GaN substrate showed ten times higher value than that of QCL on MOCVD-GaN template. We for the first time observed THz spontaneous emission spectrum on the Nitrides-based THz-QCL on injection current.
引用
收藏
页数：2
相关论文
共 50 条
  • [21] InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
    Nakamura, S
    Senoh, M
    Nagahama, S
    Iwasa, N
    Yamada, T
    Matsushita, T
    Kiyoku, H
    Sugimoto, Y
    Kozaki, T
    Umemoto, H
    Sano, M
    Chocho, K
    APPLIED PHYSICS LETTERS, 1998, 73 (06) : 832 - 834
  • [22] InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
    Appl Phys Lett, 6 (832):
  • [23] GaN/AlGaN active regions for terahertz quantum cascade lasers grown by low-pressure metal organic vapor deposition
    Huang, G. S.
    Lu, T. C.
    Yao, H. H.
    Kuo, H. C.
    Wang, S. C.
    Sun, Greg
    Lin, Chih-wei
    Chang, Li
    Soref, Richard A.
    JOURNAL OF CRYSTAL GROWTH, 2007, 298 (687-690) : 687 - 690
  • [24] InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
    Nakamura, S
    JOURNAL OF MATERIALS RESEARCH, 1999, 14 (07) : 2716 - 2731
  • [25] InGaN/GaN/AlGaN-based laser diodes grown on epitaxially laterally overgrown GaN
    Shuji Nakamura
    Journal of Materials Research, 1999, 14 : 2716 - 2731
  • [26] Field emission from polycrystalline GaN grown on Mo substrate
    Tampo, H
    Yamanaka, T
    Yamada, K
    Ohnishi, K
    Hashimoto, M
    Asahi, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (8B): : L907 - L909
  • [27] Field emission from polycrystalline GaN grown on Mo substrate
    Tampo, Hitoshi
    Yamanaka, Takayuki
    Yamada, Kohichiro
    Ohnishi, Kuniyuki
    Hashimoto, Masahiko
    Asahi, Hajime
    Japanese Journal of Applied Physics, Part 2: Letters, 2002, 41 (8 B):
  • [28] Field emission from polycrystalline GaN grown on Mo substrate
    Yamanaka, T
    Tampo, H
    Yamada, K
    Ohnishi, K
    Hashimoto, M
    Asahi, H
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 469 - 473
  • [29] Terahertz emission from large AlGaN/GaN field-effect transistors
    Lisauskas, Alvydas
    Raemer, Adam
    Burakevic, Marek
    Krozer, Viktor
    Heinrich, Wolfgang
    Roskos, Hartmut G.
    2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2016,
  • [30] Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure at high pump currents
    Akimova, I. V.
    Eliseev, P. G.
    Osinskii, M. A.
    Perlin, P.
    Quantum Electronics(English Translation of the Journal Kvantovaya Elektronika), 26 (12):
12345