Weak C-H ••• F-C hydrogen bonds make a big difference in graphane/fluorographane and fluorographene/fluorographane bilayers

被引:44
|
作者
Sun, Minglei [1 ]
Chou, Jyh-Pin [2 ]
Zhao, Yiming [3 ]
Yu, Jin [4 ]
Tang, Wencheng [1 ]
机构
[1] Southeast Univ, Sch Mech Engn, Nanjing 211189, Jiangsu, Peoples R China
[2] Hungarian Acad Sci, Inst Solid State Phys & Opt, Wigner Res Ctr Phys, POB 49, Budapest, Hungary
[3] Univ Rochester, Mat Sci Program, 500 Joseph C Wilson Blvd, Rochester, NY 14627 USA
[4] Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Jiangsu, Peoples R China
关键词
ELECTRIC-FIELD; GRAPHENE; STRENGTH; METALS; STRAIN;
D O I
10.1039/c7cp04535b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using density functional theory computations with van der Waals (vdW) corrections, we reveal that C-H center dot center dot center dot F-C hydrogen bonding exists in graphane/fluorographene and fluorographane/fluorographane bilayers. The significant C-H center dot center dot center dot F-C hydrogen bonding is strong enough to combine two separate monolayers to form the bilayer. Interestingly, both the graphane/fluorographene and fluorographane/ fluorographane bilayers are metallic in the most stable stacking configuration. Applying a perpendicular electric field can effectively open a bandgap for both bilayers, and we found that the field-induced gap opening for both graphane/fluorographene and fluorographane/fluorographane bilayers can be enhanced by biaxial tensile strain. These results are expected to aid in the design of novel electronic and optoelectronic devices based on graphene materials, and they highlight the use of weak interactions for modulating band structures in two-dimensional materials.
引用
收藏
页码:28127 / 28132
页数:6
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