Defect-formation processes in silicon doped with manganese and germanium

Deep-level transient spectroscopy has been used to study the effect of Ge atoms introduced into Si during growth manifest no electrical activity, even though their concentration is rather high: 10(16)-10(19) cm(-3). It is established that the presence of Ge atoms in the Si lattice enhances the efficiency of the formation of the deep levels E-c-0.42 eV and E-c-0.54 eV, which are associated with Mn in the Si lattice: the concentration of these deep levels in Si[ge, Mn] samples is a factor of 3-4 greater than in Si[Mn]. It is found that the presence of Ge atoms stabilizes the properties of the Mn levels in Si: They anneal more slowly the in Si[Mn] by a factor of 5-6. It is assumed that the detected effects are associated with the features of the defect of the defect structure of Si doped with Ge and Mn. (C) 1998 American Institute of Physics.