Thermal oxidation of silicon carbide: A comparison of n-type and p-type doped epitaxial layers

被引：4
|
作者：
Fu, Xiao-An [1 ]
Okino, Kenji [2 ]
Mehregany, Mehran [2 ]
机构：
[1] Univ Louisville, Dept Chem Engn, Louisville, KY 40208 USA
[2] Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 04期
关键词：
TECHNOLOGY; MOSFETS; SIO2;
D O I：
10.1063/1.3549294
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The kinetics of wet thermal oxidation of both n-type and p-type doped 6H-SiC epitaxial layers grown on p-type 6H-SiC wafers has been investigated. The oxidation rates are affected significantly by doping concentration. The kinetics of wet thermal oxidation abides by the Deal-Grove model B. E. Deal and A. S. Grove, [J. Appl. Phys. 36, 3770 (1965)]. The linear oxidation rate constant B/A and the parabolic oxidation rate constant B are obtained by fitting the measured data to the Deal-Grove model. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3549294]
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页数：3
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