A comparison of the effects of gamma irradiation on SiGe HBT and GaAsHBT technologies

被引：25
|
作者：
Zhang, SM [1 ]
Niu, GF
Cressler, JD
Mathew, SJ
Gogineni, U
Clark, SD
Zampardi, P
Pierson, RL
机构：
[1] Auburn Univ, Alabama Microelect Sci & Technol Ctr, Dept Elect & Comp Engn, Auburn, AL 36849 USA
[2] USN, Ctr Surface Warfare, Crane, IN 47522 USA
[3] Rockwell Int Sci Ctr, Thousand Oaks, CA 91360 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 06期
关键词：
D O I：
10.1109/23.903802
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comparison of the effects of gamma irradiation on Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) and Gallium-Arsenide (GaAs) HBT technologies is reported. DC and Radio Frequency (RF) performance as well as the low frequency noise are; investigated for gamma doses up to 1 Mrad(Si). The results indicate that both SiGe and GaAs HBT technologies are tolerant to gamma irradiation.
引用
收藏
页码：2521 / 2527
页数：7
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