Off-stoichiometry effect on thermoelectric properties of the new p-type sulfides compounds Cu2CoGeS4

被引:14
|
作者
Bourges, Cedric [1 ]
Al Orabi, Rabih Al Rahal [2 ]
Miyazaki, Yuzuru [1 ]
机构
[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
[2] Cent Michigan Univ, Dept Phys, Mt Pleasant, MI 48859 USA
基金
日本学术振兴会;
关键词
Thermoelectric; Sulfide; Cu2CoGeS4; Spark plasma sintering; DFT; ELECTRONIC BAND-STRUCTURE; LOW THERMAL-CONDUCTIVITY; TRANSPORT-PROPERTIES; OPTICAL-PROPERTIES; CRYSTAL-STRUCTURE; 1ST PRINCIPLES; PERFORMANCE; FIGURE; MERIT; TETRAHEDRITE;
D O I
10.1016/j.jallcom.2020.154240
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An in-depth analysis of Cu2+xCo1-xGeS4 (CCGS) has been performed to illustrate its potential as a new p-type compound for thermoelectric (TE) applications with suitable thermal stability. An intrinsic semiconductor behavior is reported with attractive TE properties, characterized by a large Seebeck coefficient and intrinsic low thermal conductivity. Band structures and elastic properties calculations sustained the experimental observations and revealed the dominant role of Cu/Co ratio in electrical transport properties. A promising TE performance is achieved through a carrier concentration tuning by Cu/Co ratio control, with a zT = 0.37 at 725 K resulting from combined large PF enhancement and a reduced kappa. (C) 2020 Elsevier B.V. All rights reserved.
引用
收藏
页数:9
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