Mechanism of optical degradation in microstructured InGaN light-emitting diodes

被引：7
|
作者：
Li, Z. L. [1 ]
Li, K. H. [1 ]
Choi, H. W. [1 ]
机构：
[1] Univ Hong Kong, Semicond Lighting & Display Lab, Hong Kong, Hong Kong, Peoples R China
来源：
JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 11期
关键词：
GALLIUM NITRIDE; GAN; DAMAGE; NOISE;
D O I：
10.1063/1.3517829
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
While the enhancement of light extraction efficiency from microstructured InGaN light-emitting diodes (mu LED) has been firmly established, there is concern over the effect of microstructuring on the device lifetimes. A study on the electrical characteristics and reliability of mu LED arrays has been carried out. Despite improved optical performance, expanded device sidewalls served to accelerate the rate of optical degradation, adversely affect the lifetimes of devices. Through current-voltage plots and noise spectrum measurements, vertical current conduction along the plasma-damaged sidewalls was identified as the key degradation mechanism. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3517829]
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页数：4
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