A high speed and low voltage BiCMOS tristate buffer with positive and negative charge pump

被引：0
|
作者：
Suriyaammaranon, C [1 ]
Dejhan, K [1 ]
Cheevasuvit, F [1 ]
Soonyeekan, C [1 ]
机构：
[1] King Mongkuts Inst Technol Ladkrabang, Fac Engn, Bangkok 10520, Thailand
来源：
ICECS 2000: 7TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS & SYSTEMS, VOLS I AND II | 2000年
关键词：
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
A novel high speed, low voltage BiCMOS tristate buffer is presented. The single MOS driving with pass transistor technique is used to improve the driving capability. Furthermore, the positive and negative charge pump with complementary BICMOS technique to eliminate the voltage loss due to base-emitter turn on voltage is used to enhance the driving capability and realize the high speed, low voltage with full swing operation. The simulation results have shown that it outperforms other previous tristate circuits.
引用
收藏
页码：11 / 14
页数：4
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