Quantum size effects in n-PbTe/p-SnTe/n-PbTe heterostructures -: art. no. 063103

被引：54

作者：

Rogacheva, EI

Nashchekina, ON

Meriuts, AV

Lyubchenko, SG

Dresselhaus, MS

Dresselhaus, G

机构：

[1] Natl Tech Univ, Kharkov Polytech Inst, UA-61002 Kharkov, Ukraine

[2] MIT, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 06期

关键词：

D O I：

10.1063/1.1862338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependencies of the thermoelectric properties of n-PbTe/p-SnTe/n-PbTe heterostructures on the SnTe quantum well width (d(SnTe) = 0.5-6.0 nm) at fixed PbTe barrier layers thicknesses were studied. It was established that the thickness dependencies of the Seebeck coefficient, electrical conductivity, the Hall coefficient, charge carrier mobility, and the thermoelectric power factor are distinctly nonmonotonic. The observed effect is attributed to the size quantization of the energy spectrum of the hole gas in a SnTe quantum well. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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