Microstructure and composition of InAsN alloys grown by plasma-source molecular beam epitaxy

被引：27
|
作者：
Beresford, R [1 ]
Stevens, KS [1 ]
Schwartzman, AF [1 ]
机构：
[1] Brown Univ, Div Engn, Providence, RI 02912 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 03期
关键词：
D O I：
10.1116/1.590003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A series of growths conducted at different substrate temperatures and V:III ratios is analyzed by x-ray diffraction to determine composition. A metastable InAsN alloy plus pure InAs are obtained for temperatures in the range 450-500 degrees C and total V:III ratio of approximately unity. The InAs fraction in the alloy phase increases at lower temperatures, the maximum observed is 13%. For higher temperatures or higher V:III ratio only separated phases of InAs and InN are found. (C) 1998 American Vacuum Society.
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收藏
页码：1293 / 1296
页数：4
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