Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs

被引：9

作者：

Nazarov, A. N. ^{[1
]}

Lee, C. W. ^{[2
]}

Kranti, A. ^{[2
]}

Ferain, I. ^{[2
]}

Yan, R. ^{[2
]}

Akhavan, N. Dehdashti ^{[2
]}

Razavi, P. ^{[2
]}

Yu, R. ^{[2
]}

Colinge, J. P. ^{[2
]}

机构：

[1] NASU, Lashkaryov Inst Semicond Phys, UA-0328 Kiev, Ukraine

[2] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland

来源：

ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15 | 2011年 / 35卷 / 05期

基金：

爱尔兰科学基金会;

关键词：

MOSFETS;

D O I：

10.1149/1.3570779

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Random telegraph-signal noise (RTN) is observed in n-channel junctionless metal-oxide-silicon field effect transistors (MOSFETs) and n-channel inversion-mode MOSFETs fabricated in the same technological process on UNIBOND (R) SOI wafers as a function of gate and drain voltages and measurement temperature. It is shown that the RTN of the drain current in the JL transistor operating in linear mode begins to appear when the transistor starts to form an accumulation channel and has considerable lower amplitude than in the IM MOSFET. On the basis of analysis of the average charge capture and emission time of the charge from the traps responsible for the RTN the main parameters of the traps are determined.

引用

页码：73 / 78

页数：6

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