Random telegraph-signal noise in junctionless transistors

被引：36
|
作者：
Nazarov, A. N. [1 ]
Ferain, I. [2 ]
Akhavan, N. Dehdashti [2 ]
Razavi, P. [2 ]
Yu, R. [2 ]
Colinge, J. P. [2 ]
机构：
[1] Natl Acad Sci Ukraine, Lashkaryov Inst Semicond Phys, Kiev, Ukraine
[2] Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 09期
基金：
爱尔兰科学基金会;
关键词：
OPERATION; MOSFETS;
D O I：
10.1063/1.3557505
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Random telegraph-signal noise (RTN) is measured in junctionless metal-oxide-silicon field-effect transistors (JL MOSFETs) as a function of gate and drain voltage and temperature. It is shown that the RTN in JL MOSFETs increases significantly when an accumulation layer is formed. The amplitude of RTN is considerably smaller in JL devices than in inversion-mode MOSFET fabricated using similar fabrication parameters. A measurement technique is developed to extract the main parameters of the traps, including the average charge capture and emission time from the traps. (C) 2011 American Institute of Physics. [doi:10.1063/1.3557505]
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页数：3
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