Growth of semi-polar InN layer on GaAs (1 1 0) surface by MOVPE

被引：7

作者：

Murakami, Hisashi ^{[1
]}

Cho, Hyun Chol ^{[1
]}

Suematsu, Mayu ^{[1
]}

Togashi, Rie ^{[1
]}

Kumagai, Yoshinao ^{[1
]}

Toba, Ryuichi ^{[2
]}

Koukitu, Akinori ^{[1
]}

机构：

[1] Tokyo Univ Agr & Technol, Dept Appl Chem, Tokyo 1848588, Japan

[2] Dowa Elect Mat Co Ltd, Tokyo 1010021, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Surface structure; Metalorganic vapor phase epitaxy; Nitrides; Semiconducting indium compounds; VAPOR-PHASE EPITAXY; PLANE SAPPHIRE;

D O I：

10.1016/j.jcrysgro.2010.10.027

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Investigation of the hetero-epitaxial growth of InN on a GaAs (1 1 0) substrate was performed by metalorganic vapor phase epitaxy in order to realize the formation of semi-polar InN layer on it. The orientation relationship between InN and GaAs (11 0) was confirmed by 20 - omega and pole figure of X-ray diffraction measurements. It was found that the crystalline orientation strongly depended on the growth temperature; mixed domains of (1 0 (1) over bar 3) and (1 1 (2) over bar 0) InN have been grown on GaAs (1 1 0) surfaces when the growth temperature was below 550 degrees C, while (1 0 (1) over bar 3) semi-polar InN layers could be grown by increasing the growth temperature above 575 degrees C. It was also found that the in-plane anisotropy of semi-polar InN layer was suppressed by increasing the growth temperature. Epitaxial relationship of the InN with the GaAs (1 1 0) substrate was InN (1 0 (1) over bar 3) plane parallel to GaAs (1 1 0) and InN ((2) over bar 1 1 0) plane parallel to GaAs((1) over bar 1 0). 2010 Elsevier B.V. All rights reserved.

引用

页码：479 / 482

页数：4

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