Influences of space charge and electrode on the electrical transport through (Ba,Sr)TiO3 thin film capacitors

被引:2
|
作者
Sun, J. [1 ]
Zheng, X. J. [1 ,2 ]
Yin, W. [1 ]
Tang, M. H. [1 ,2 ]
Li, W. [1 ]
机构
[1] Xiangtan Univ, Fac Mat Optoelect & Phys, Xiangtan 411105, Hunan, Peoples R China
[2] Xiangtan Univ, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Hunan, Peoples R China
关键词
Electrical transport; Field-dependent permittivity; Space charge; Electrode material; (Ba; Sr)TiO3 thin film capacitors; LEAKAGE CURRENT; LOW INDUCTANCE; P-N; CURRENTS;
D O I
10.1016/j.apsusc.2011.01.008
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The combined model of thermionic emission and carrier drift-diffusion is derived to simulate the electrical transport through BST thin film capacitors. In the model the field-dependent permittivity is obtained from the derivative of the polarization distinguished with the traditional characterization. The simulated currents show the hysteresis. The influences of space charges and electrode materials on the current density-applied voltage characteristics have been studied. The simulation results suggest that the current densities can be greatly influenced by the space charges at the cathode interface and the barrier height at the electrode/BST interface. It is expected that this work can provide some useful guidelines to the design and performance improvement of BST thin film capacitors and other BST thin film devices. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:4990 / 4993
页数:4
相关论文
共 50 条
  • [31] Electrical conduction in (Ba, Sr)TiO3 thin film MIS capacitor under humid conditions
    Agarwal, S
    Sharma, GL
    Manchanda, R
    SOLID STATE COMMUNICATIONS, 2001, 119 (12) : 681 - 686
  • [32] Structural and Electrical properties of Ba0.6 Sr0.4 TiO3 thin film on LNO/Pt bottom electrode
    Upadhyay, R. B.
    Jalaja, K.
    Joshi, U. S.
    FUNCTIONAL OXIDES AND NANOMATERIALS, 2017, 1837
  • [33] Effects of the postannealing atmosphere on the dielectric properties of (Ba, Sr)TiO3 capacitors:: Evidence of an interfacial space charge layer
    Pontes, FM
    Leite, ER
    Longo, E
    Varela, JA
    Araujo, EB
    Eiras, JA
    APPLIED PHYSICS LETTERS, 2000, 76 (17) : 2433 - 2435
  • [34] Metal organic chemical vapor deposition of Ru electrode for (Ba,Sr)TiO3 capacitors
    Kim, Y
    Ha, SC
    Jeong, KC
    Hong, K
    Roh, JS
    Yoon, HK
    INTEGRATED FERROELECTRICS, 2001, 36 (1-4) : 285 - 294
  • [35] Oxidized titanium as a bottom electrode adhesion layer for the multilayer (Ba,Sr)TiO3 capacitors
    Koutsaroff, IP
    Zelner, M
    Woo, P
    McNeil, L
    Buchbinder, M
    Cervin-Lawry, A
    INTEGRATED FERROELECTRICS, 2002, 45 : 97 - 103
  • [36] Thin film (Ba,Sr)TiO3 over stacked RuO2 nodes for Gbit DRAM capacitors
    Yoshida, M
    Yabuta, H
    Sone, S
    Takemura, K
    Sakuma, T
    Kato, Y
    Miyasaka, Y
    Iizuka, T
    Yamamichi, S
    Yamaguchi, H
    Lesaicherre, PY
    Nishimoto, S
    NEC RESEARCH & DEVELOPMENT, 1996, 37 (03): : 305 - 316
  • [37] Dielectric properties of the compositionally graded (Ba,Sr)TiO3 thin film
    Zhai, JW
    Yao, X
    Zhang, LY
    Shen, B
    Chen, HD
    FERROELECTRICS, 2005, 329 : 947 - 952
  • [38] Near-electrode model of transient currents in (Ba,Sr)TiO3 thin film capacitor structures
    Boikov, YA
    Goltsman, BM
    Yarmarkin, VK
    Lemanov, VV
    APPLIED PHYSICS LETTERS, 2002, 80 (21) : 4003 - 4005
  • [39] Ti thickness effects in Pt/Ti bottom electrode on properties of (Ba,Sr)TiO3 thin film
    Cha, Seon Yong
    Lee, Seung Hoon
    Lee, Hee Chul
    Integrated Ferroelectrics, 1997, 16 (1 -4 pt 3): : 183 - 190
  • [40] Ti thickness effects in Pt/Ti bottom electrode on properties of (Ba,Sr)TiO3 thin film
    Cha, SY
    Lee, SH
    Lee, HC
    INTEGRATED FERROELECTRICS, 1997, 16 (1-4) : 183 - 190