Quantum dots formed in a GaAs/AlGaAs quantum ring

被引:12
|
作者
Muehle, A. [1 ]
Wegscheider, W. [2 ]
Haug, R. J. [1 ]
机构
[1] Leibniz Univ Hannover, Inst Festkorperphys, D-30167 Hannover, Germany
[2] Univ Regensburg, Inst Angew & Expt Phys 2, D-93040 Regensburg, Germany
关键词
D O I
10.1063/1.2833694
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate the tunability of a GaAs/AlGaAs quantum ring showing coherent Aharonov-Bohm oscillations up to a gate voltage regime where the ring splits into three quantum dots. This is explained based on the structure's special confinement potential. We characterized the dots by analyzing the corresponding sets of Coulomb blockade lines. Additionally, the spatial configuration of the dots was confirmed by charge measurements using an adjacent quantum point contact. (c) 2008 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 50 条
  • [41] Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy
    Bocquel, J.
    Giddings, A. D.
    Mano, T.
    Prosa, T. J.
    Larson, D. J.
    Koenraad, P. M.
    APPLIED PHYSICS LETTERS, 2014, 105 (15)
  • [42] Confined multiexciton states of GaAs/AlGaAs quantum dots grown on a (411)A GaAs surface
    Watatani, C
    Edamatsu, K
    Itoh, T
    Hayashi, H
    Shimomura, S
    Hiyamizu, S
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 224 (02): : 353 - 356
  • [43] Optical anisotropy in InAs quantum dots formed on GaAs pyramids
    An, H.
    Motohisa, J.
    Fukui, T.
    1600, Japan Society of Applied Physics (40):
  • [44] Optical properties of InAs quantum dots formed on GaAs pyramids
    An, HY
    Motohisa, J
    APPLIED PHYSICS LETTERS, 2000, 77 (03) : 385 - 387
  • [45] Optical anisotropy in InAs quantum dots formed on GaAs pyramids
    An, HY
    Motohisa, J
    Fukui, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (4A): : 2312 - 2316
  • [46] Intraband relaxation of photoexcited electrons in GaAs/AlGaAs quantum wells and InAs/GaAs self-assembled quantum dots
    Müller, T
    Parz, W
    Schrey, FF
    Strasser, G
    Unterrainer, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S287 - S289
  • [47] DYNAMICS OF THE INNER RING IN PHOTOLUMINESCENCE OF GaAs/AlGaAs COUPLED QUANTUM WELLS
    Wilkes, J.
    Mouchliadis, L.
    Muljarov, E. A.
    Ivanov, A. L.
    Hammack, A. T.
    Butov, L. V.
    Gossard, A. C.
    11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11), 2010, 210
  • [48] Decoherence Dynamics of Localized States in a Single GaAs/AlGaAs Quantum Ring
    Kim, Minju
    Park, Seongho
    Yamashita, Yuma
    Kyhm, Kwangseuk
    Ikezawa, Michio
    Bietti, Sergio
    Sanguinetti, Stefano
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2018, 12 (09):
  • [49] GAAS QUANTUM DOTS
    NOZIK, AJ
    UCHIDA, H
    KAMAT, PV
    CURTIS, C
    ISRAEL JOURNAL OF CHEMISTRY, 1993, 33 (01) : 15 - 20
  • [50] AlGaInAs capping layer impact on emission and structure of AlGaAs/GaAs quantum wells with InAs quantum dots
    Cisneros Tamayo, R.
    Polupan, G.
    Torchynska, T., V
    Vega-Macotela, L. G.
    Stintz, A.
    Escobosa Echavarria, A.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2019, 90 (212-218) : 212 - 218