Design optimization of InGaAsP-InGaAlAs 1.55 μm strain-compensated MQW lasers for direct modulation applications

被引：0
|
作者：
Akram, MN [1 ]
Silfvenius, C [1 ]
Berggren, J [1 ]
Kjebon, O [1 ]
Schatz, R [1 ]
机构：
[1] Photon & Microwave Lab, Dept Microelect & Informat Technol, S-16440 Kista, Sweden
来源：
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings | 2004年
关键词：
InGaAsP; InGaAlAs; MQW lasers;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A comprehensive simulation study of InGaAsP (well)/InGaAlAs(barrier) 1.55 um strain-compensated MQW lasers is presented. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and strain of the barriers and p-doping in the active region. Some preliminary results are also presented for the manufactured lasers using these QWs indicating a good material platform.
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页码：418 / 421
页数：4
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