Characterisation of Zn1-xMgxSe mixed crystals by photoacoustic method

被引:4
|
作者
Firszt, F
Legowski, S
Meczynska, H
Pawlak, J
Sekulska, B
Szatkowski, J
Zakrzewski, J
Paszkowicz, W
机构
关键词
wide-gap II-VI semiconductors; mixed crystals; Zn1-xMgxSe; photoacoustic effect;
D O I
10.1117/12.280737
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The photoacoustic spectroscopy with a piezoelectric transducer was employed to evaluate the band gaps of a series of Zn1-xMgxSe mixed crystals of different composition. The measurements were performed at 300K, 90K and 6K. The Jackson-Amer model of photoacoustic effect for thermally thin and optically thick samples was applied For samples of x > 0.18 (wurtzite structure) subgap optical absorption was observed.
引用
收藏
页码:217 / 220
页数:4
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