Low crystallization temperature for Ta2O5 thin films

被引：4
|
作者：
Lin, J
Suzuki, T
Matsunaga, D
Hieda, K
机构：
[1] Fujitsu Ltd, Elect Devices Grp, Mfg Technol Dev Div, Tokyo 1970833, Japan
[2] Toshiba Co Ltd, Proc & Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2358522, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 11期
关键词：
Ta2O5 thin films; Ru thin films; crystallization; forming gas anneal; catalytic effect;
D O I：
10.1143/JJAP.42.7023
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We confirmed that Ta2O5 thin films can be crystallized by coating it with a Ru film and then annealing in H-2-containing ambient at temperatures as low as 400degreesC. Stoichiometric Ta2O5 is thermally stable but the TaOx phase in the Ta2O5 films disappears during H-2 annealing at 400degreesC.
引用
收藏
页码：7023 / 7024
页数：2
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