On a current mechanism in Ta2O5 thin films

被引：4

作者：

Pipinys, Povilas ^{[1
]}

Rimeika, Alfonsas ^{[1
]}

机构：

[1] Vilnius Pedag Univ, Dept Phys, LT-08106 Vilnius, Lithuania

来源：

CENTRAL EUROPEAN JOURNAL OF PHYSICS | 2008年 / 6卷 / 04期

关键词：

Ta2O5; Frenkel emission; phonon-assisted tunnelling;

D O I：

10.2478/s11534-008-0113-2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrical conduction in the temperature range of 120-370 K has been studied in sandwiched structures of Al/Ta2O5/Si. The tantalum oxide films were prepared by evaporation of tantalum on a p-Si crystal substrate, followed by oxidation at a temperature of 600 degrees C. The temperature-dependent current-voltage (I-V) characteristics are explained on the basis of a phonon-assisted tunnelling model. The same explanation is given for I-V data measured on Ta2O5 films by other investigators. From the comparison of experimental data with theory the density of states in the interface layer is derived and the electron-phonon interaction constant is assessed.

引用

页码：792 / 796

页数：5

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