On a current mechanism in Ta2O5 thin films

被引：4
|
作者：
Pipinys, Povilas [1 ]
Rimeika, Alfonsas [1 ]
机构：
[1] Vilnius Pedag Univ, Dept Phys, LT-08106 Vilnius, Lithuania
来源：
CENTRAL EUROPEAN JOURNAL OF PHYSICS | 2008年 / 6卷 / 04期
关键词：
Ta2O5; Frenkel emission; phonon-assisted tunnelling;
D O I：
10.2478/s11534-008-0113-2
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Electrical conduction in the temperature range of 120-370 K has been studied in sandwiched structures of Al/Ta2O5/Si. The tantalum oxide films were prepared by evaporation of tantalum on a p-Si crystal substrate, followed by oxidation at a temperature of 600 degrees C. The temperature-dependent current-voltage (I-V) characteristics are explained on the basis of a phonon-assisted tunnelling model. The same explanation is given for I-V data measured on Ta2O5 films by other investigators. From the comparison of experimental data with theory the density of states in the interface layer is derived and the electron-phonon interaction constant is assessed.
引用
收藏
页码：792 / 796
页数：5
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