InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission

被引：3
|
作者：
Jiao, Zhejing [1 ]
Huang, Weiguo [4 ]
Liu, Bowen [2 ]
Lin, Jiajie [3 ]
You, Tiangui [3 ]
Wang, Shumin [5 ]
Gong, Qian [4 ]
Gu, Yi [4 ]
Ou, Xin [2 ,3 ]
Li, Xue [2 ]
机构：
[1] Shanghai Univ Elect Power, Coll Elect & Informat Engn, Shanghai 200090, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Transducer Technol, Shanghai 200083, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Technol, Shanghai 200050, Peoples R China
[5] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 136卷
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
InAs triangular quantum wells; InP substrate; Mid-infrared emission; Si substrate; Wafer bonding; LASER APPLICATIONS; INP; PHOTOLUMINESCENCE; TEMPERATURE; PERFORMANCE;
D O I：
10.1016/j.mssp.2021.106163
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The properties of InAs/In0.53Ga0.37As triangular quantum wells (QWs) grown on an InP/SiO2/Si integrated substrate by ion-slicing technology are investigated. The material structure and growth quality are characterized by the X-ray diffraction (XRD) and transmission electron microscope measurements. The photoluminescence (PL) spectra at various temperatures are also analyzed. The PL peak wavelengths red-shift from 1.94 to 2.13 mu m with the increase of temperature from 12.4 to 300 K. The experimental results of the QWs on InP/SiO2/Si substrate are found to be comparable with the performance of the same QWs grown on an InP substrate. The results are promising for future integration of Si with InP-based optical devices for the applications of light emission in mid infrared wavelength range.
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页数：6
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