InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission

被引：3
|
作者：
Jiao, Zhejing [1 ]
Huang, Weiguo [4 ]
Liu, Bowen [2 ]
Lin, Jiajie [3 ]
You, Tiangui [3 ]
Wang, Shumin [5 ]
Gong, Qian [4 ]
Gu, Yi [4 ]
Ou, Xin [2 ,3 ]
Li, Xue [2 ]
机构：
[1] Shanghai Univ Elect Power, Coll Elect & Informat Engn, Shanghai 200090, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Transducer Technol, Shanghai 200083, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[4] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Key Lab Terahertz Technol, Shanghai 200050, Peoples R China
[5] Chalmers Univ Technol, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2021年 / 136卷
基金：
国家重点研发计划; 中国国家自然科学基金;
关键词：
InAs triangular quantum wells; InP substrate; Mid-infrared emission; Si substrate; Wafer bonding; LASER APPLICATIONS; INP; PHOTOLUMINESCENCE; TEMPERATURE; PERFORMANCE;
D O I：
10.1016/j.mssp.2021.106163
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The properties of InAs/In0.53Ga0.37As triangular quantum wells (QWs) grown on an InP/SiO2/Si integrated substrate by ion-slicing technology are investigated. The material structure and growth quality are characterized by the X-ray diffraction (XRD) and transmission electron microscope measurements. The photoluminescence (PL) spectra at various temperatures are also analyzed. The PL peak wavelengths red-shift from 1.94 to 2.13 mu m with the increase of temperature from 12.4 to 300 K. The experimental results of the QWs on InP/SiO2/Si substrate are found to be comparable with the performance of the same QWs grown on an InP substrate. The results are promising for future integration of Si with InP-based optical devices for the applications of light emission in mid infrared wavelength range.
引用
收藏
页数：6
相关论文
共 50 条
  • [21] Mid-infrared emission from InAs quantum dots grown by metal-organic vapor phase epitaxy
    Tang, Xiaohong
    Yin, Zongyou
    Liu, Wei
    Zhang, Daohua
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (06) : 683 - 686
  • [22] Si/SiO2 dispersive optics paves the way to ultrafast mid-infrared lasers
    Pervak, Vladimir
    Amotchkin, Tatiana
    Wang, Qing
    Pronin, Oleg
    Mak, Ka Fai
    Trubetskov, Michael
    2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC), 2019,
  • [23] Densely packed Ge quantum dots grown on SiO2/Si substrate
    Zhang, L.
    Ye, H.
    Huangfu, Y. R.
    Zhang, C.
    Liu, X.
    APPLIED SURFACE SCIENCE, 2009, 256 (03) : 768 - 772
  • [24] Mid-infrared photoluminescence from structures with InAs/GaSb type II quantum wells
    Selivanov, A. V.
    Makhov, I. S.
    Panevin, V. Yu
    Sofronov, A. N.
    Firsov, D. A.
    Vorobjev, L. E.
    Shterengas, L.
    2ND INTERNATIONAL SCHOOL AND CONFERENCE SAINT-PETERSBURG OPEN ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SPBOPEN2015), 2015, 643
  • [25] Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon
    Delli, E.
    Hodgson, P. D.
    Bentley, M.
    Repiso, E.
    Craig, A. P.
    Lu, Q.
    Beanland, R.
    Marshall, A. R. J.
    Krier, A.
    Carrington, P. J.
    APPLIED PHYSICS LETTERS, 2020, 117 (13)
  • [26] Mid-infrared emission in InAs/GaAs self-assembled quantum dots
    Boucaud, P
    Sauvage, S
    Brunhes, T
    Glotin, F
    Prazeres, R
    Ortega, JM
    Thierry-Mieg, V
    Lemaître, A
    Gérard, JM
    SEMICONDUCTOR QUANTUM DOTS, 2000, 571 : 279 - 284
  • [27] Room-Temperature Mid-Infrared Emission from Faceted InAsSb Multi Quantum Wells Embedded in InAs Nanowires
    Alhodaib, Aiyeshah
    Noori, Yasir J.
    Carrington, Peter J.
    Sanchez, Ana M.
    Thompson, Michael D.
    Young, Robert J.
    Krier, Anthony
    Marshall, Andrew R. J.
    NANO LETTERS, 2018, 18 (01) : 235 - 240
  • [28] High Power Mid-Infrared Quantum Cascade Lasers Grown on Si
    Slivken, Steven
    Shrestha, Nirajman
    Razeghi, Manijeh
    PHOTONICS, 2022, 9 (09)
  • [29] Comparative study of metamorphic InAs layers grown on GaAs and Si for mid-infrared photodetectors
    Ryu, Geunhwan
    Kang, Soo Seok
    Han, Jae-Hoon
    Chu, Rafael Jumar
    Jung, Daehwan
    Choi, Won Jun
    SOLID-STATE ELECTRONICS, 2021, 176
  • [30] Role of defects in Si/SiO2 quantum wells
    Degoli, E
    Ossicini, S
    OPTICAL MATERIALS, 2001, 17 (1-2) : 95 - 98
12345