Numerical Modeling of n-CdTe/p-ZnTe Thin Film Solar Cells

被引:2
|
作者
Wang, Wei [1 ]
Palekis, Vasilios [1 ]
Alom, Md Zahangir [1 ]
Elahi, Sheikh Tawsif [1 ]
Ferekides, Chris [1 ]
机构
[1] Univ S Florida, Elect Engn, Tampa, FL 33620 USA
关键词
CdTe solar cell; Numerical simulations; Open circuit voltage; Minority carrier lifetime; Interface states; CDS/CDTE;
D O I
10.1109/PVSC43889.2021.9518791
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Improving the open circuit voltage (VOC) has always been a critical need and focus in the research of CdTe solar cells. High n-type doping in CdTe is easier to achieve compare to p-type doping. In this paper, numerical simulations are used to investigate the factors that impact VOC in n-CdTe/p-ZnTe heterojunction solar cells. The impact of the properties of the n-CdTe absorber layer, p-ZnTe window layer and n-CdTe/p-ZnTe heterojunction interface have been studied. Simulation results from SCAPS-1D and AMPS-1D have been utilized to demonstrate the impact of n-type doping concentration, minority carrier lifetime and absorber/emitter interface defect density on device performance and are presented in this manuscript.
引用
收藏
页码:1676 / 1679
页数:4
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