Numerical Modeling of n-CdTe/p-ZnTe Thin Film Solar Cells

被引：2

作者：

Wang, Wei ^{[1
]}

Palekis, Vasilios ^{[1
]}

Alom, Md Zahangir ^{[1
]}

Elahi, Sheikh Tawsif ^{[1
]}

Ferekides, Chris ^{[1
]}

机构：

[1] Univ S Florida, Elect Engn, Tampa, FL 33620 USA

来源：

2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2021年

关键词：

CdTe solar cell; Numerical simulations; Open circuit voltage; Minority carrier lifetime; Interface states; CDS/CDTE;

D O I：

10.1109/PVSC43889.2021.9518791

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Improving the open circuit voltage (VOC) has always been a critical need and focus in the research of CdTe solar cells. High n-type doping in CdTe is easier to achieve compare to p-type doping. In this paper, numerical simulations are used to investigate the factors that impact VOC in n-CdTe/p-ZnTe heterojunction solar cells. The impact of the properties of the n-CdTe absorber layer, p-ZnTe window layer and n-CdTe/p-ZnTe heterojunction interface have been studied. Simulation results from SCAPS-1D and AMPS-1D have been utilized to demonstrate the impact of n-type doping concentration, minority carrier lifetime and absorber/emitter interface defect density on device performance and are presented in this manuscript.

引用

页码：1676 / 1679

页数：4

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