Development of a barium-free high temperature cesium Tacitron

被引:0
|
作者
Curry, RD [1 ]
Money, WM [1 ]
Rodriguez, AE [1 ]
Elizondo, J [1 ]
机构
[1] Univ Missouri, Dept Elect Engn, Columbia, MO 65211 USA
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A barium free, high temperature, cesium Tacitron has been developed using a platinum, hollow cathode, emitter. The hollow cathode emitter used in our investigation is designed to enhance the current emission of a Tacitron without the use of barium in the switch. In a barium-cesium Tacitron, the barium is known to cover the surface of a molybdenum emitter lowing it's work function. The barium however limits the lifetime of the Tacitron, unless sophisticated seal technology is used in the manufacture of the Tacitron. The hollow cathode emitter was operated at current densities from 2.5 A/cm(2) up to 7.0 A/cm(2). Continuous operation of the Tacitron was demonstrated at 100-150 V, and repetition rates up to 5.8 kHz with measured voltage drops of 3.5 V to 9.0 V. The results of the experimental characterization are compared to the computer model, and the applicability of this unique Tacitron design is discussed.
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页码:941 / 947
页数:7
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