Dark current characterization of Au and Hg-vacancy hybrid doped p-type epitaxy long-wavelength HgCdTe infrared photodetectors

被引：1
|
作者：
Li, Qing [1 ]
Hu, Weida [1 ]
Lin, Chun [2 ]
Chen, Xiaoshuang [1 ]
Lu, Wei [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
来源：
INFRARED TECHNOLOGY AND APPLICATIONS XLIV | 2018年 / 10624卷
关键词：
AVALANCHE MECHANISM;
D O I：
10.1117/12.2303831
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页数：9
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