CdSe-Sensitized p-CuSCN/nanowire n-ZnO heterojunctions

被引：386
|
作者：
Lévy-Clément, C
Tena-Zaera, R
Ryan, MA
Katty, A
Hodes, G
机构：
[1] CNRS, LCMTR, F-94320 Thiais, France
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[3] Weizmann Inst Sci, Dept Mat & Interfaces, IL-76100 Rehovot, Israel
[4] Univ Valencia, E-46100 Burjassot, Spain
来源：
ADVANCED MATERIALS | 2005年 / 17卷 / 12期
关键词：
D O I：
10.1002/adma.200401848
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A fully inorganic analogue of the nanostructured dye-sensitized solar cell is fabricated using an electrochemically grown n-ZnO/CdSe core-shell nanowire array (see Figure). Filling the voids between the nanowires with p-type wide-bandgap CuSCN by a solution-deposition technique leads to an extremely thin solar cell exhibiting 2.3 % energy-conversion efficiency.
引用
收藏
页码：1512 / 1515
页数：4
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