Gallium nitride electro-acoustic devices and acoustic metamaterials

被引:0
|
作者
Rais-Zadeh, Mina [1 ]
机构
[1] Univ Michigan, Dept Elect & Comp Engn, Ann Arbor, MI 48109 USA
关键词
Acoustic metamaterials; acoustoelectric effect; electro-acoustics; gallium nitride; metamaterials;
D O I
10.1117/12.2225332
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Gallium nitride (GaN) being one of a few piezoelectric semiconductors with low acoustic loss is a perfect material for electro-acoustic applications. Interactions of electrons and phonons are facilitated by the piezoelectric effect in addition to the deformation coupling in GaN, a property that can be used to implement a variety of very interesting devices and metamaterials, such as resonant transistors, acoustic amplifiers, circulators, and couplers. This talk covers theoretical basis of such devices and overviews recent advances in this technology.
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页数:6
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