p-type InGaN cap layer for normally off operation in AlGaN/GaN heterojunction field effect transistors

被引：18
|
作者：
Shimizu, Mitsuaki [1 ]
Piao, Guaxi [1 ]
Inada, Masaki [1 ]
Yagi, Syuichi [1 ]
Yano, Yoshiki [1 ,2 ]
Akutsu, Nakao [1 ,2 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] Taiyo Nippon Sanso Corp, Tsukuba Lab, Tsukuba, Ibaraki 3002611, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期
关键词：
AlGaN/GaN heterojunction field effect transistor; p-InGaN cap layer; normally off operation;
D O I：
10.1143/JJAP.47.2817
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The normally off operation of AlGaN/GaN heterojunction field effect transistor (HFET) devices with a p-type InGaN cap layer under a gate electrode was demonstrated. The threshold gate voltage V-Gth was 0.5 V, and the maximum transconductance g(m) was about 120 mS/mm. The maximum drain current I-Dmax was more than 2 10 mA/mm. RF characteristics were also measured, and it was found that f(T) is 2.1 GHz and f(max) is 6.4 GHz when the gate length is 2 mu m.
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页码：2817 / 2819
页数：3
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