p-type InGaN cap layer for normally off operation in AlGaN/GaN heterojunction field effect transistors

被引：18

作者：

Shimizu, Mitsuaki ^{[1
]}

Piao, Guaxi ^{[1
]}

Inada, Masaki ^{[1
]}

Yagi, Syuichi ^{[1
]}

Yano, Yoshiki ^{[1
,2
]}

Akutsu, Nakao ^{[1
,2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Taiyo Nippon Sanso Corp, Tsukuba Lab, Tsukuba, Ibaraki 3002611, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 04期

关键词：

AlGaN/GaN heterojunction field effect transistor; p-InGaN cap layer; normally off operation;

D O I：

10.1143/JJAP.47.2817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The normally off operation of AlGaN/GaN heterojunction field effect transistor (HFET) devices with a p-type InGaN cap layer under a gate electrode was demonstrated. The threshold gate voltage V-Gth was 0.5 V, and the maximum transconductance g(m) was about 120 mS/mm. The maximum drain current I-Dmax was more than 2 10 mA/mm. RF characteristics were also measured, and it was found that f(T) is 2.1 GHz and f(max) is 6.4 GHz when the gate length is 2 mu m.

引用

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页码：2817 / 2819

页数：3

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