Kinetics of molecular hydrogen dissociative adsorption on Si(111) studied by sum-frequency vibrational spectroscopy and second harmonic generation

被引:9
|
作者
Mao, MY
Miranda, PB
Kim, DS
Shen, YR [1 ]
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA
来源
PHYSICAL REVIEW B | 2001年 / 64卷 / 03期
关键词
D O I
10.1103/PhysRevB.64.035415
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Sum-frequency vibrational spectroscopy (SFVS) and optical second-harmonic generation (SHG) were used to monitor hydrogen adsorption on Si(111) by molecular-hydrogen dosing. A properly treated sample exhibited a single H-Si stretch-vibrational mode representing H adsorbed at the top sites. A fully H-terminated Si(111) surface could be obtained by H-2 dosing at sufficiently high temperatures. The observed adsorption kinetics was qualitatively the same as that reported by Hofer and co-workers, including a nearly equal adsorption-energy barrier. However, our results indicate that the initial adsorption on a nearly bare surface obeys the simple Langmuir model. And with subsequent adsorption to higher coverage range, the adsorption gradually becomes cooperative type with the sticking coefficient increasing with H coverage at sufficient high temperature. Evidences of SFVS spectroscopy revealed that it is related to the Si(lll) surface-structure change during H2 adsorption, which appeared to undergo a structural change from (7x7) to (1x1) with increasing temperature or coverage. A simple model was used to qualitatively explain our observation.
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页数:9
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