Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction

被引：18

作者：

Nakatsuka, Osamu ^{[1
]}

Kitada, Hideki ^{[2
]}

Kim, Youngsuk ^{[2
]}

Mizushima, Yoriko ^{[3
]}

Nakamura, Tomoji ^{[3
]}

Ohba, Takayuki ^{[2
]}

Zaima, Shigeaki ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

[3] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期

关键词：

D O I：

10.1143/JJAP.50.05ED03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the characterization of the local strain structure in thinned Si layers for wafer-on-a-wafer (WOW) applications by using X-ray microdiffraction with a synchrotron radiation source. The microdiffraction reveals the fluctuation of strains in the thin Si layer around through-silicon via (TSV) interconnects with a sub-micrometer scale. We can separately estimated the in-plane and out-of-plane strain structures in the Si layer, and found that the anisotropic strain is induced in the Si layer between the TSV interconnects. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[41] Characterization of three-dimensional crystallographic distributions using polychromatic X-ray microdiffraction
Ice, G. E.
Pang, J. W. L.
Barabash, R. I.
Puzyrev, Y.
SCRIPTA MATERIALIA, 2006, 55 (01) : 57 - 62
[42] Local plasticity of Al thin films as revealed by X-ray microdiffraction
Spolenak, R
Brown, WL
Tamura, N
MacDowell, AA
Celestre, RS
Padmore, HA
Valek, B
Bravman, JC
Marieb, T
Fujimoto, H
Batterman, BW
Patel, JR
PHYSICAL REVIEW LETTERS, 2003, 90 (09)
[43] Analysis of Transmission Characteristics of Copper/Carbon Nanotube Composite Through-Silicon Via Interconnects
Fu, Kai
Zheng, Jie
Zhao, Wen Sheng
Hu, Yue
Wang, Gaofeng
CHINESE JOURNAL OF ELECTRONICS, 2019, 28 (05) : 920 - 924
[44] Characterisation of the HEXITEC4S X-ray spectroscopic imaging detector incorporating through-silicon via (TSV) technology
Veale, M. C.
Booker, P.
Church, I.
Jones, L. L.
Lipp, J.
Schneider, A.
Seller, P.
Wilson, M. D.
Chsherbakov, I.
Kolesnikova, I.
Lozinskaya, A.
Novikov, V.
Tolbanov, O.
Tyazhev, A.
Zarubin, A.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2022, 1025
[45] Analysis of Transmission Characteristics of Copper/Carbon Nanotube Composite Through-Silicon Via Interconnects
FU Kai
ZHENG Jie
ZHAO Wensheng
HU Yue
WANG Gaofeng
ChineseJournalofElectronics, 2019, 28 (05) : 920 - 924
[46] Sensitivity Analysis of Through-Silicon Via (TSV) Interconnects for 3-D ICs
Zhao, Wen-Sheng
Hu, Jun
Yin, Wen-Yan
2011 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS), 2011,
[47] Carbon-Nanotube Through-Silicon Via Interconnects for Three-Dimensional Integration
Wang, Teng
Jeppson, Kejll
Ye, Lilei
Liu, Johan
SMALL, 2011, 7 (16) : 2313 - 2317
[48] X-ray microdiffraction studies to measure strain fields in a metal matrix composite
Lee, HR
Kupperman, D
Yun, W
Cai, Z
Rodrigues, W
REVIEW OF SCIENTIFIC INSTRUMENTS, 1999, 70 (01): : 175 - 177
[49] Measurement of strain in Al-Cu interconnect lines with x-ray microdiffraction
Solak, HH
Vladimirsky, Y
Cerrina, F
Lai, B
Yun, W
Cai, Z
Ilinski, P
Legnini, D
Rodrigues, W
JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) : 884 - 890
[50] Modeling and Characterization of Coaxial Through-Silicon Via With Electrically Floating Inner Silicon
Zhao, Wen-Sheng
Zheng, Jie
Wang, Jing
Liang, Feng
Wen, Fei
Dong, Linxi
Wang, Dingwen
Wang, Gaofeng
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2017, 7 (06): : 936 - 943

← 1 2 3 4 5 →