Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction

被引：18

作者：

Nakatsuka, Osamu ^{[1
]}

Kitada, Hideki ^{[2
]}

Kim, Youngsuk ^{[2
]}

Mizushima, Yoriko ^{[3
]}

Nakamura, Tomoji ^{[3
]}

Ohba, Takayuki ^{[2
]}

Zaima, Shigeaki ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[2] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

[3] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 05期

关键词：

D O I：

10.1143/JJAP.50.05ED03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the characterization of the local strain structure in thinned Si layers for wafer-on-a-wafer (WOW) applications by using X-ray microdiffraction with a synchrotron radiation source. The microdiffraction reveals the fluctuation of strains in the thin Si layer around through-silicon via (TSV) interconnects with a sub-micrometer scale. We can separately estimated the in-plane and out-of-plane strain structures in the Si layer, and found that the anisotropic strain is induced in the Si layer between the TSV interconnects. (C) 2011 The Japan Society of Applied Physics

引用

页数：4

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