Dual-Frequency Plasma Enhanced Chemical Vapor Deposition of Diamond-Like Carbon Thin Films

被引:0
|
作者
Jamshidi, R. [2 ]
Hosseini, S. I. [1 ]
Ahmadizadeh, Y. [3 ]
机构
[1] Shahid Beheshti Univ, Laser & Plasma Res Inst, GC, Tehran, Iran
[2] Islamic Azad Univ, S Tehran Branch, Tehran, Iran
[3] Univ Aeronaut Sci & Technol, Fac Sci, Tehran, Iran
关键词
OPTICAL-PROPERTIES; GROWTH; ENERGY;
D O I
10.12693/APhysPolA.122.230
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Dual-frequency plasma enhanced chemical vapor deposition was used to grow diamond-like carbon thin films from CH4, H-2 gas mixture. The effects of radio frequency, microwave power, and gas ratio were investigated. Various species have been identified in the CH4-H-2 plasma using optical emission spectroscopy and their effects on film properties have been studied. Increasing the RF power to 400 W, the variation trend of refractive index and CH, C-2 intensity ratios change beyond the 300 W, but the growth rate shows the continuous increasing character from 6 to 11.6 nm/min. Increasing the hydrogen content in the system, the intensity ratio of CH, C-2, CH+ and growth rate show decreasing tendency and the refractive index rises from 1.98 to 2.63. Adding MW produced plasma to the system grows the refractive index to 2.88 and growth rate to 10.8 nm/min. The water contact angle rises from 58.95 degrees to 73.74 degrees as the RF power increases to 300 W but begins to reduce until 400 W. In addition, the contact angle shows a growing tendency by increasing the hydrogen flow to the chamber. In addition, the structures of the films were investigated by the Raman spectroscopy.
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页码:230 / 235
页数:6
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