Quasi-three-dimensional simulation of carrier dynamics in quantum well DFB lasers

被引:3
|
作者
Witzigmann, B
Oyafuso, F
Hess, K
机构
[1] ETH Zurich, Integrated Syst Lab, CH-8092 Zurich, Switzerland
[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA
来源
IEE PROCEEDINGS-OPTOELECTRONICS | 1998年 / 145卷 / 06期
关键词
laser simulation; DFB laser; quantum well laser; carrier dynamics;
D O I
10.1049/ip-opt:19982475
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A quasi-3D well (QW) distributed feedback (DFB) laser diodes is presented. It takes into account both longitudinal effects such as the nonuniformity of the optical intensity, local gain, and spontaneous emission. and lateral effects such as current spreading, quantum carrier capture, and quantum carrier heating. The simulation is performed by solving several 2D cross-sections using Minilase II and a 1D longitudinal solver in a self-consistent fashion. As an example, an analysis of spatial hole burning in a lambda/4 phase shifted DFB laser is given. It is shown that spatial hole burning (SHB) results in a local gain saturation, and is mainly restricted to electrons and holes within the QW. Investigations of electron heating at high power show that the temperature distribution of the bound electrons and the LO phonons in the QW is insignificant, and only slightly influenced by SHB.
引用
收藏
页码:339 / 343
页数:5
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