A novel 6.5 kV IGCT for high power current source inverters

被引：5
|
作者：
Weber, A
Kern, P
Dalibor, T
机构：
来源：
ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年
关键词：
D O I：
10.1109/ISPSD.2001.934593
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The emphasis of this paper is to show how the design of the Integrated Gate Commutated Thyristor (IGCT) and the commutation inductance of the drive influence the dynamic over-voltage in the current source inverter (CSI). Different semiconductor design tools to reduce dynamic over-voltage are described and the impact on other parameters such as device losses is presented. Differences between the application in CSI and voltage source inverter (VSI) are discussed.
引用
收藏
页码：215 / 218
页数：4
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