Tunable V-Cavity Laser with Butt-Joint Passive Tuning Section for Fast Wavelength Switching

被引：1
|
作者：
Liao, Xiaolu [1 ]
Guo, Jia [1 ]
He, Jian-Jun [1 ]
机构：
[1] Zhejiang Univ, Coll Opt Sci & Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Zhejiang, Peoples R China
来源：
IEEE PHOTONICS JOURNAL | 2017年 / 9卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Semiconductor laser; V-cavity laser; tunable laser; SEMICONDUCTOR-LASER; OPTICAL NETWORK;
D O I：
10.1109/JPHOT.2017.2715278
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the fast carrier-induced wavelength switching in V-cavity laser using butt-joint passive tuning section. Using the carrier plasma based tuning effect in combination with temperature induced gain spectrum shift, over 25-nm wavelength tuning with 100 GHz channel spacing is obtained with side-mode suppression ratio up to 40 dB. Sixteen channels can be switched by using a single electrode control on the long cavity electrode and seven channels on the short cavity electrode. Mode competition is observed during the transient and the switching delay time varies from 1 to 11 ns for different switching paths.
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页数：7
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