Optical absorption in random media:: Application to Ga1-xMnxAs epilayers -: art. no. 075306

被引：39
|
作者：
Szczytko, J
Bardyszewski, W
Twardowski, A
机构：
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[2] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland
来源：
PHYSICAL REVIEW B | 2001年 / 64卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.64.075306
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A model to calculate the fundamental absorption edge in heavily doped semiconductors is proposed. The model is based on the assumption that the quasimomentum conservation rule in optical transitions is partially released in random media. This model is applied to transmission data of Ga1-xMnxAs epilayers. The values obtained for the free hole concentration p = 7 x 10(19) cm(-3), and the p-d exchange integral N(o)beta = - 1 eV reproduce reasonably well the fundamental absorption edge of Ga1-xMnxAs.
引用
收藏
页数：8
相关论文
共 50 条
  • [1] Ga1-xMnxAs:: A frustrated ferromagnet -: art. no. 047201
    Zaránd, G
    Jankó, B
    PHYSICAL REVIEW LETTERS, 2002, 89 (04)
  • [2] Anisotropic magnetoresistance in Ga1-xMnxAs -: art. no. 212407
    Baxter, DV
    Ruzmetov, D
    Scherschligt, J
    Sasaki, Y
    Liu, X
    Furdyna, JK
    Mielke, CH
    PHYSICAL REVIEW B, 2002, 65 (21) : 2124071 - 2124074
  • [3] Saturated ferromagnetism and magnetization deficit in optimally annealed Ga1-xMnxAs epilayers -: art. no. 012408
    Potashnik, SJ
    Ku, KC
    Mahendiran, R
    Chun, SH
    Wang, RF
    Samarth, N
    Schiffer, P
    PHYSICAL REVIEW B, 2002, 66 (01)
  • [4] Optical studies of carrier and phonon dynamics in Ga1-xMnxAs -: art. no. 113509
    Yee, KJ
    Lee, D
    Liu, X
    Lim, WL
    Dobrowolska, M
    Furdyna, JK
    Lim, YS
    Lee, KG
    Ahn, YH
    Kim, DS
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)
  • [5] Chemical profile and magnetoresistance of Ga1-xMnxAs/GaAs/AlAs/GaAs/Ga1-xMnxAs tunnel junctions -: art. no. 075206
    Mattana, R
    Elsen, M
    George, JM
    Jaffrès, H
    Van Dau, FN
    Fert, A
    Wyczisk, MF
    Olivier, J
    Galtier, P
    Lépine, B
    Guivarc'h, A
    Jézéquel, G
    PHYSICAL REVIEW B, 2005, 71 (07)
  • [6] Anomalous Hall effect in insulating Ga1-xMnxAs -: art. no. 193203
    Yuldashev, SU
    Jeon, HC
    Im, HS
    Kang, TW
    Lee, SH
    Furdyna, JK
    PHYSICAL REVIEW B, 2004, 70 (19) : 1 - 4
  • [7] Infrared probe of itinerant ferromagnetism in Ga1-xMnxAs -: art. no. 097203
    Singley, EJ
    Kawakami, R
    Awschalom, DD
    Basov, DN
    PHYSICAL REVIEW LETTERS, 2002, 89 (09) : 972031 - 972034
  • [8] Mn distribution and spin polarization in Ga1-xMnxAs -: art. no. 207201
    Wu, RQ
    PHYSICAL REVIEW LETTERS, 2005, 94 (20)
  • [9] Effective Hamiltonian for Ga1-xMnxAs in the dilute limit -: art. no. 097202
    Fiete, GA
    Zaránd, G
    Damle, K
    PHYSICAL REVIEW LETTERS, 2003, 91 (09)
  • [10] Curie temperature limit in ferromagnetic Ga1-xMnxAs -: art. no. 041308
    Yu, KM
    Walukiewicz, W
    Wojtowicz, T
    Lim, WL
    Liu, X
    Bindley, U
    Dobrowolska, M
    Furdyna, JK
    PHYSICAL REVIEW B, 2003, 68 (04)
12345