Fabrication of isolated ferroelectric domains in nano-scale

被引：0
|
作者：
Jung, WK [1 ]
Choi, YS
Bae, C
Lee, BK
Kim, SH
Shin, H
机构：
[1] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea
[2] Inostek Inc, Seoul 153023, South Korea
来源：
INTEGRATED FERROELECTRICS | 2003年 / 59卷
关键词：
atomic force microscopy; piezoelectric thin films; isolated ferroelectric domains; microstructure evolution;
D O I：
10.1080/714950502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lead zirconate titanate (PZT) thin films were prepared by a sol-gel method on platinized Si. Their microstructure and surface morphology were characterized by XRD and AFM. Phase transformations of the prepared PZT films from pyrochlore to ferroelectric were observed at 550 and 600degreesC for furnace and RTP annealing, respectively. Smaller scattering angle (2degrees) XRD results showed more pyrochlore phases in the near surfaces and PZT (100) nucleated in Pt substrate and transformed to the surfaces in FA annealing PZT films. Isolated ferroelectric phases in the surroundings of pyrochlore phases were fabricated in order to study size effect of laterally confined ferroelectric domains. The isolated ferroelectric phases in the diameter of about 400 nm were found in FA PZT films at 450degreesC. Piezoresponse mode of AFM shows complex ferroelectric domains in the isolated phase, not from the surroundings.
引用
收藏
页码：1521 / 1527
页数：7
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