High resolution LT-STM imaging of PTCDA molecules assembled on an InSb(001) c(8x2) surface

被引:10
|
作者
Goryl, G. [1 ]
Godlewski, S. [1 ]
Kolodziej, J. J. [1 ]
Szymonski, M. [1 ]
机构
[1] Jagiellonian Univ, Fac Phys Astron & Appl Comp Sci, NANOSAM, Ctr Nanometer Scale Sci & Adv Mat, PL-30059 Krakow, Poland
关键词
D O I
10.1088/0957-4484/19/18/185708
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The self-assembling of 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) molecules deposited on an InSb(001) c(8 x 2) surface at sub-monolayer quantities has been investigated at low temperature (77 K) using scanning tunnelling microscopy. Sub-molecular resolution was obtained on PTCDA molecules. The results reveal that individual PTCDA molecules are arranged on the substrate in chains parallel to the [110] crystallographic direction, correlated with characteristic features of the low temperature InSb(001) c(8 x 2) surface electronic structure. A structural model for PTCDA molecules adsorbed on InSb is proposed.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] SIMULTANEOUS EPITAXY AND SUBSTRATE OUT-DIFFUSION AT A METAL-SEMICONDUCTOR INTERFACE - FE/GAAS(001)-C(8X2)
    CHAMBERS, SA
    XU, F
    CHEN, HW
    VITOMIROV, IM
    ANDERSON, SB
    WEAVER, JH
    [J]. PHYSICAL REVIEW B, 1986, 34 (10): : 6605 - 6611
  • [42] Missing dimer defect on β-SiC(001)-c(2 x 2) surface -: numerical analysis of the structure and STM profiles
    Stankiewicz, B
    Kaminski, W
    Jurczyszyn, L
    [J]. APPLIED SURFACE SCIENCE, 2004, 238 (1-4) : 36 - 41
  • [43] IMAGING ATOMS IN SURFACE DIMERS OF GAAS(001)-C(2X8)/(2X4) BY ELECTRON-EMISSION HOLOGRAPHY
    LI, H
    TONG, SY
    [J]. SURFACE SCIENCE, 1993, 282 (03) : 380 - 388
  • [44] EPITAXY, OVERLAYER GROWTH, AND SURFACE SEGREGATION FOR CO/GAAS(110) AND CO/GAAS(100)-C(8X2)
    XU, F
    JOYCE, JJ
    RUCKMAN, MW
    CHEN, HW
    BOSCHERINI, F
    HILL, DM
    CHAMBERS, SA
    WEAVER, JH
    [J]. PHYSICAL REVIEW B, 1987, 35 (05): : 2375 - 2384
  • [45] Accelerated molecular dynamics study of the GaAs(001)β2(2 x 4)/c(2 x 8) surface
    Lin, Yangzheng
    Fichthorn, Kristen A.
    [J]. PHYSICAL REVIEW B, 2012, 86 (16)
  • [46] Surface states resonance on In-terminated InAs(001)4 x 2-c(8 x 2) clean surface
    De Padova, P
    Perfetti, P
    Quaresima, C
    Richter, C
    Zerrouki, M
    Heckmann, O
    Ilakovac, V
    Hricovini, K
    [J]. APPLIED SURFACE SCIENCE, 2003, 212 : 10 - 16
  • [47] TEST OF HIGH-ANGULAR-RESOLUTION X-RAY PHOTOELECTRON DIFFRACTION AND HOLOGRAPHIC IMAGING FOR C(2X2)S ON NI(001)
    SAIKI, RS
    KADUWELA, AP
    KIM, YJ
    FRIEDMAN, DJ
    OSTERWALDER, J
    THEVUTHASAN, S
    FADLEY, CS
    [J]. SURFACE SCIENCE, 1992, 279 (03) : 305 - 318
  • [48] Anisotropic two-dimensional metallic state of Ge(001)c(8x2)-Au surfaces: An angle-resolved photoelectron spectroscopy
    Nakatsuji, Kan
    Niikura, Ryota
    Shibata, Yuki
    Yamada, Masamichi
    Iimori, Takushi
    Komori, Fumio
    [J]. PHYSICAL REVIEW B, 2009, 80 (08)
  • [49] Theoretical study of the structural properties of the Si(001)-c(4 x 2) surface and the formation of its STM images
    Kaminski, W
    Jurczyszyn, L
    [J]. SURFACE SCIENCE, 2004, 566 : 29 - 34
  • [50] Surface structure of SiC formed by C60 molecules on a Si(001)-2x1 surface at 800 °C
    Cheng, C. -P.
    Huang, J. -W.
    Pi, T. -W.
    Lee, H. -H.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (12)