Grain boundary characteristics and stress-induced damage morphologies in sputtered and electroplated copper films

被引:0
|
作者
Park, H [1 ]
Hwang, SJ [1 ]
Oh, KH [1 ]
Joo, YC [1 ]
机构
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
来源
MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2003 | 2003年 / 766卷
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Various Cu films were fabricated using sputtering and electroplating with and without additive, and their surface damages after annealing were investigated. After annealing at 435degreesC, the difference between damage morphologies of the films was observed. In some films stress-induced grooves along the grain boundaries were observed, while in the others voids at the grain boundary triple junctions were observed. It was also observed that the stress-induced groove was formed along the high energy grain boundaries. To explain the morphological difference of surface damages, a simple parameter considering the contributions of grain structures and grain boundary characteristics to surface and grain boundary diffusions is suggested. The effective grain boundary area, which is a function of grain size, film thickness and the fraction of high energy grain boundaries, played a key role in the morphological difference.
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页码:397 / 402
页数:6
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