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- [42] Enhanced internal quantum efficiency of an InGaN/GaN quantum well as a function of silver thickness due to surface plasmon coupling PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2176 - 2178
- [43] Well Thickness Dependence of the Internal Quantum Efficiency and Carrier Concentration in GaN-Based Multiple Quantum Well Light-Emitting Diodes Journal of Electronic Materials, 2016, 45 : 786 - 790
- [45] Modification of internal quantum efficiency and efficiency droop in GaN-based flip-chip light-emitting diodes via the Purcell effect OPTICS EXPRESS, 2015, 23 (19): : A1157 - A1166