Mechanical stress in SiO2/Si structures formed by thermal oxidation of amorphous and crystalline silicon

被引：14
|
作者：
Szekeres, A
Danesh, P
机构：
[1] Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia 1784
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1996年 / 11卷 / 08期
关键词：
D O I：
10.1088/0268-1242/11/8/019
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Stress in SiO2 formed by oxidation of crystalline (c-Si) and hydrogenated amorphous silicon (a-Si:H) at temperatures ranging from 850-1060 degrees C in dry O-2 (H2O < 3 ppm) and in dry O-2 contaminated with hydrogen was studied. During the oxidation the a-Si:H films underwent crystallization and the resultant oxide stress was compressive or tensile depending on the oxidation temperature. Oxides grown on c-Si in dry O-2 contaminated with hydrogen showed higher compressive stress than that characteristic for dry oxidation of c-Si.
引用
收藏
页码：1225 / 1230
页数：6
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