共 50 条
- [1] Stress in the SiO2/Si structures formed by thermal oxidation FUNDAMENTAL ASPECTS OF ULTRATHIN DIELECTRICS ON SI-BASED DEVICES, 1998, 47 : 65 - 78
- [3] Defects in SiO2/Si Structures Formed by Dry Thermal Oxidation of RF Hydrogen Plasma Cleaned Si 11TH EUROPHYSICAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS (EURODIM 2010), 2010, 15
- [4] INTRINSIC STRESS AND STRESS GRADIENTS AT THE SIO2/SI INTERFACE IN STRUCTURES PREPARED BY THERMAL-OXIDATION OF SI AND SUBJECTED TO RAPID THERMAL ANNEALING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 775 - 781
- [10] Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2009, 7 (02): : 237 - 241