Resistance switching in HfO2-based OxRRAM devices

被引：7

作者：

Calka, P. ^{[1
]}

Martinez, E. ^{[1
]}

Lafond, D. ^{[1
]}

Dansas, H. ^{[1
]}

Tirano, S. ^{[2
]}

Jousseaume, V. ^{[1
]}

Bertin, F. ^{[1
]}

Guedj, C. ^{[1
]}

机构：

[1] CEA LETI, F-38054 Grenoble 9, France

[2] Univ Aix Marseille 1, Polytech Marseille, IM2NP, UMR CNRS 6242, F-13451 Marseille 20, France

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

HfO2; TiN; Resistive switch; OxRRAM; TEM; AES; XPS;

D O I：

10.1016/j.mee.2011.03.125

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the origins of the resistivity change during the forming of HfO2 based resistive random access memories. The high and low resistive states of HfO2 were investigated using electrical measurements, TEM, XPS, and AES. TEM and XPS show that the HfO2/TiN interface is free from TiOxNy oxi-nitride states. Electrical measurements show that voltage threshold magnitude required for the formation of the conductive paths through the HfO2 layer depends on the polarity. The AES measurements show that HfO2 and HfOx or Hf metallic may coexist in the low resistive state. (c) 2011 Elsevier B.V. All rights reserved.

引用

页码：1140 / 1142

页数：3

共 50 条

[31] Exploring the Physical Properties Related to Resistive Switching Events in HfO2-Based RRAM Devices with an Analytical Framework
Das, Om Prakash
Pandey, Shivendra Kumar
ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (01) : 327 - 334
[32] Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs
Mulaosmanovic, Halid
Mueller, Franz
Lederer, Maximilian
Ali, Tarek
Hoffmann, Raik
Seidel, Konrad
Zhou, Haidi
Ocker, Johannes
Mueller, Stefan
Duenkel, Stefan
Kleimaier, Dominik
Mueller, Johannes
Trentzsch, Martin
Beyer, Sven
Breyer, Evelyn T.
Mikolajick, Thomas
Slesazeck, Stefan
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) : 3466 - 3471
[33] Three-state resistive switching in HfO2-based RRAM
Lian, Xiaojuan
Miranda, Enrique
Long, Shibing
Perniola, Luca
Liu, Ming
Sune, Jordi
SOLID-STATE ELECTRONICS, 2014, 98 : 38 - 44
[34] Polarization Switching and Charge Trapping in HfO2-Based Ferroelectric Transistors
Zhou, Haidi
Ocker, Johannes
Mueller, Stefan
Pesic, Milan
Mikolajick, Thomas
IEEE ELECTRON DEVICE LETTERS, 2023, 44 (11) : 1903 - 1906
[35] On the thickness dependence of the polarization switching kinetics in HfO2-based ferroelectric
Sawabe, Yoshiki
Saraya, Takuya
Hiramoto, Toshiro
Su, Chun-Jung
Hu, Vita Pi-Ho
Kobayashi, Masaharu
APPLIED PHYSICS LETTERS, 2022, 121 (08)
[36] HfO2-based ferroelectric synaptic devices: challenges and engineering solutions
Kwon, Taegyu
Choi, Hyeong Seok
Lee, Dong Hyun
Han, Dong Hee
Cho, Yong Hyeon
Jeon, Intak
Jung, Chang Hwa
Lim, Hanjin
Moon, Taehwan
Park, Min Hyuk
Chemical Communications, 2025, 61 (15) : 3061 - 3080
[37] Impact of the forming and cycling processes on the electrical and physical degradation characteristics of HfO2-based resistive switching devices
Munoz-Gorriz, J.
Gonzalez, M. B.
Miranda, E.
Sune, J.
Campabadal, F.
THIN SOLID FILMS, 2020, 706
[38] Interfacial variation in HfO2-based resistive switching devices with titanium electrodes under asymmetric bias operation
Zhou, Kuan-Ju
Chen, Min-Chen
Chang, Ting-Chang
Lin, Shih-Kai
Wang, Yu-Bo
Zhang, Yong-Ci
Yen, Po-Yu
Shao, Kui-You
Huang, Hui-Chun
Huang, Jen-Wei
Sze, Simon M.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 56 (06)
[39] Current compliance impact on the variability of HfO2-based RRAM devices
Zhang, Meiyun
Long, Shibing
Li, Yang
Liu, Qi
Lv, Hangbing
Liu, Ming
2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2016, : 96 - 97
[40] HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
Garbin, Daniele
Vianello, Elisa
Bichler, Olivier
Rafhay, Quentin
Gamrat, Christian
Ghibaudo, Gerard
DeSalvo, Barbara
Perniola, Luca
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (08) : 2494 - 2501

← 1 2 3 4 5 →