Giant voltage amplification from electrostatically induced incipient ferroelectric states

被引:10
|
作者
Graf, Monica [1 ]
Aramberri, Hugo [1 ]
Zubko, Pavlo [2 ,3 ]
Iniguez, Jorge [1 ,4 ]
机构
[1] Luxembourg Inst Sci & Technol LIST, Mat Res & Technol Dept, Esch Sur Alzette, Luxembourg
[2] UCL, London Ctr Nanotechnol, London, England
[3] UCL, Dept Phys & Astron, London, England
[4] Univ Luxembourg, Dept Phys & Mat Sci, Belvaux, Luxembourg
基金
英国工程与自然科学研究理事会;
关键词
NEGATIVE CAPACITANCE;
D O I
10.1038/s41563-022-01332-z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ferroelectrics subject to suitable electric boundary conditions present a steady negative capacitance response(1,)(2). When the ferroelectric is in a heterostructure, this behaviour yields a voltage amplification in the other elements, which experience a potential difference larger than the one applied, holding promise for low-power electronics(3). So far research has focused on verifyingthis effect and little is known about how to optimize it. Here, we describe an electrostatic theory of ferroelectric/dielectric superlattices, convenient model systems(4,5), and show the relationship between the negative permittivity of the ferroelectric layers and the voltage amplification in the dielectric ones. Then, we run simulations of PbTiO3/SrTiO3 superlattices to reveal the factors most strongly affecting the amplification. In particular, we find that giant effects (up to tenfold increases) can be obtained when PbTiO3 is brought close to the so-called 'incipient ferroelectric' state.
引用
收藏
页码:1252 / +
页数:7
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