Electrical properties in low temperature range (5 K-300 K) of tantalum oxide dielectric MIM capacitors

被引:23
|
作者
Deloffre, E
Montès, L
Ghibaudo, G
Bruyère, S
Blonkowski, S
Bécu, S
Gros-Jean, M
Crémer, S
机构
[1] ENSERG, IMEP, F-38016 Grenoble, France
[2] STMicroelect, Cent RD Labs, F-38926 Crolles, France
[3] CEA Leti, F-38054 Grenoble, France
关键词
D O I
10.1016/j.microrel.2004.11.024
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Tantalum oxide (Ta2O5) is widely used for MINI (Metal-Insulator-Metal) capacitor owing of its high dielectric constant. This work examines current-voltage and capacitance-voltage characteristics in the 5 K-300 K temperature range. Working at low temperature was chosen in order to freeze trapping mechanisms of the MIM capacitor. The curvature of C-V characteristics radically changes from 5 K to 300 K. The capacitance variation under voltage at 50 K and below can be investigated using the Langevin theory. From this model the permanent dipole moment and the number of dipoles have been extracted. From Poole-Frenkel identification curves, activation energy around 0.20 eV and a dielectric constant of 26 were found for positive polarisation. However, conduction mechanisms cannot be reduced to strick Poole-Frenkel modelling. (c) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:925 / 928
页数:4
相关论文
共 50 条
  • [31] Dusty plasma in a glow discharge in helium in temperature range of 5–300 K
    I. S. Samoilov
    V. P. Baev
    A. V. Timofeev
    R. Kh. Amirov
    A. V. Kirillin
    V. S. Nikolaev
    Z. V. Bedran
    Journal of Experimental and Theoretical Physics, 2017, 124 : 496 - 504
  • [32] Dielectric Relaxation Behaviour of Bi:SrTiO3: III. Dielectric properties in the temperature range of 300-600 K
    Dept. of Ceramics/Glass Engineering, University of Aveiro, Aveiro, Portugal
    不详
    J. Eur. Ceram. Soc., 11 (1629-1635):
  • [33] Dielectric relaxation behaviour of Bi:SrTiO3:: III.: Dielectric properties in the temperature range of 300-600 K
    Zhi, Y
    Chen, A
    Vilarinho, PM
    Mantas, PQ
    Baptista, JL
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 1998, 18 (11) : 1629 - 1635
  • [34] Impacts of Ti on electrical properties of Ge metal–oxide–semiconductor capacitors with ultrathin high-k LaTiON gate dielectric
    H. X. Xu
    J. P. Xu
    C. X. Li
    C. L. Chan
    P. T. Lai
    Applied Physics A, 2010, 99 : 903 - 906
  • [35] Thermoluminescence properties of ZnO nanoparticles in the temperature range 10-300 K
    Isik, M.
    Yildirim, T.
    Gasanly, N. M.
    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2016, 78 (01) : 76 - 81
  • [36] Magnetic properties of pyrrhotine with the hexagonal structure in the temperature range of 4–300 K
    G. A. Dorogina
    S. G. Titova
    R. I. Gulyaeva
    E. N. Selivanov
    Physics of the Solid State, 2015, 57 : 689 - 693
  • [37] Pyroelectric properties of lithium triborate in the temperature range from 4.2 to 300 K
    Matyjasik, S
    Shaldin, YV
    PHYSICS OF THE SOLID STATE, 2001, 43 (08) : 1464 - 1467
  • [38] Electronic Structure, Electrical and Dielectric Properties of BaSnO3 below 300 K
    Singh, Prabhakar
    Brandenburg, Benjamin J.
    Sebastian, C. Peter
    Singh, Prakash
    Singh, Sindhu
    Kumar, Devendra
    Parkash, Om
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (05) : 3540 - 3545
  • [39] Pyroelectric properties of lithium triborate in the temperature range from 4.2 to 300 K
    S. Matyjasik
    Yu. V. Shaldin
    Physics of the Solid State, 2001, 43 : 1464 - 1467
  • [40] THERMOELECTRIC PROPERTIES OF NIOBIUM IN TEMPERATURE RANGE 300 DEGREES - 1200 DEGREES K
    RAAG, V
    KOWGER, HV
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 2045 - &