Electrical properties in low temperature range (5 K-300 K) of tantalum oxide dielectric MIM capacitors

被引:23
|
作者
Deloffre, E
Montès, L
Ghibaudo, G
Bruyère, S
Blonkowski, S
Bécu, S
Gros-Jean, M
Crémer, S
机构
[1] ENSERG, IMEP, F-38016 Grenoble, France
[2] STMicroelect, Cent RD Labs, F-38926 Crolles, France
[3] CEA Leti, F-38054 Grenoble, France
关键词
D O I
10.1016/j.microrel.2004.11.024
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Tantalum oxide (Ta2O5) is widely used for MINI (Metal-Insulator-Metal) capacitor owing of its high dielectric constant. This work examines current-voltage and capacitance-voltage characteristics in the 5 K-300 K temperature range. Working at low temperature was chosen in order to freeze trapping mechanisms of the MIM capacitor. The curvature of C-V characteristics radically changes from 5 K to 300 K. The capacitance variation under voltage at 50 K and below can be investigated using the Langevin theory. From this model the permanent dipole moment and the number of dipoles have been extracted. From Poole-Frenkel identification curves, activation energy around 0.20 eV and a dielectric constant of 26 were found for positive polarisation. However, conduction mechanisms cannot be reduced to strick Poole-Frenkel modelling. (c) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码:925 / 928
页数:4
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