Scanning spreading resistance microscopy of aluminum implanted 4H-SiC

被引：4
|
作者：
Osterman, J
Abtin, L
Zimmermann, U
Janson, MS
Anand, S
Hallin, C
Hallén, A
机构：
[1] Royal Inst Technol, Dept Microelect & Informat Technol, S-16440 Kista, Sweden
[2] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2003年 / 102卷 / 1-3期
关键词：
silicon carbide; SSRM; implantation; activation;
D O I：
10.1016/S0921-5107(03)00018-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Results from the application of scanning spreading resistance microscopy (SSRM) for characterization of aluminum implanted 4H-SiC are presented. The implanted profiles are investigated electrically and morphologically as a function of post-implantation anneal conditions. The method is shown to be advantageous for measuring and optimizing the activation in many aspects with respect to existing alternative techniques: it provides information of the entire depth and Al concentration range, it is unaffected by annealing induced re-growth and/or surface roughening, and requires little sample preparation. The results indicate that the apparent activation and surface roughness do not saturate in the investigated temperature range of 1500-1650 degreesC. Finally, an apparent activation energy for the process of 3 eV is estimated. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：128 / 131
页数：4
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